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- W2587808806 abstract "This paper performs static and dynamic performance characterization of latest generation 900-V and 1.2-kV discrete Silicon Carbide (SiC) MOSFETs from four well-known manufacturers: CREE, ROHM, General Electric (GE) and Sumitomo Electric Industries (SEI). The static characterization performed includes acquisition of output characteristics, transfer characteristics, specific on-state resistances, threshold voltages and junction capacitances of the devices under test (DUTs). The static characterizations are done from 25°C up to 150°C to investigate variation of parameters versus temperature. At the other hand and for dynamic characterization, following a double-pulse tester design the tests are done at four different temperatures on all devices: 25°C, 100°C, 150°C and 200°C. In dynamic test, recommended gate voltages are applied to all devices and the switching speeds are matched. The switching losses are computed from double-pulse test (DPT) results." @default.
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- W2587808806 date "2016-09-01" @default.
- W2587808806 modified "2023-09-22" @default.
- W2587808806 title "Characterization and comparison of latest generation 900-V and 1.2-kV SiC MOSFETs" @default.
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- W2587808806 doi "https://doi.org/10.1109/ecce.2016.7854911" @default.
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