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• W2588433245 abstract "Pure and yttrium doped HfO2 thin films were fabricated on Si (100) substrates by chemical solution deposition through a layer by layer crystallization process. We systematically investigated the effects of thickness and Y doped concentration on structure and electrical properties of the HfO2 films. Results revealed that 4 nm thick undoped HfO2 was crystallized into a t/c-phase due to the surface energy effect, and this higher symmetry phase could be retained up to a film thickness of 16 nm through the layer by layer crystallization process. This layer by layer crystallization process also required less Y doping to stabilize t/c-HfO2 in thick films. The films showed a high dielectric constant about 42, low leakage current density of about 10− 7 A/cm2 (at 1 MV/cm) and a breakdown field up to 5 MV/cm. Considering the cost-effective deposition technique and good electrical properties, these films would be suitable for insulator applications in microelectronic devices." @default.
• W2588433245 created "2017-02-24" @default.
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• W2588433245 date "2017-04-01" @default.
• W2588433245 modified "2023-10-04" @default.
• W2588433245 title "Structure and electrical properties of pure and yttrium-doped HfO2 films by chemical solution deposition through layer by layer crystallization process" @default.
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• W2588433245 doi "https://doi.org/10.1016/j.matdes.2017.02.019" @default.
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