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• W2588672219 endingPage "52" @default.
• W2588672219 startingPage "47" @default.
• W2588672219 abstract "In this study, we proposed a metal-oxide high-k-oxide-silicon (MOHOS) memory device using a nickel oxide film as the charge trapping layer, and studied the effect of post-deposition rapid thermal annealing (RTA) on the physical and electrical properties. The physical properties were investigated via multiple material analysis techniques such as X-ray diffraction and atomic force microscopy. The optimal annealing temperature for depositing the charge trapping layer was determined through a thorough investigation of the memory window, program/erase (P/E) cycle, crystalline structure, and material composition. Compared to the as-deposited NiO2 film, a MOHOS-type memory device annealed at 900 °C in a nitrogen atmosphere exhibited improved memory characteristics, in terms of a larger window in the capacitance-voltage hysteresis, better data retention (lower charge loss of 11%), faster program and erase cycles, and endurance characteristics (104 P/E cycles) without any significant drift in the flat band voltage. Therefore, the MOHOS memory device with a NiO2 trapping layer is a very promising candidate for future memory device applications." @default.
• W2588672219 created "2017-02-24" @default.
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• W2588672219 date "2017-06-01" @default.
• W2588672219 modified "2023-09-23" @default.
• W2588672219 title "Physical and electrical properties of flash memory devices with nickel oxide(NiO 2 ) charge trapping layer" @default.
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• W2588672219 doi "https://doi.org/10.1016/j.vacuum.2017.02.009" @default.
• W2588672219 hasPublicationYear "2017" @default.
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