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- W2589076309 abstract "The aim of this study is to investigate the suitability of InP to GaAs Wafer Fusion in optoelectronic devices. Wafer Fusion is a new technology employed in the integration of lattice mismatched materials. InP to GaAs wafer fusion has mainly been developed for the use in long wavelength (1.3 or 1.55 11m) Vertical Cavity Surface Emitting Lasers (VCSELs). At these wavelengths it is difficult to find high reflecting mirrors lattice matched to the InP based active region. To solve this problem lattice mismatched GaAs Distributed Bragg Reflectors (DBRs) are wafer fused to the active region. The effect of the n-doping concentration on the junction resistance has been studied. Complementary measurements with Secondary Mass Spectroscopy (SIMS) to analyse the dopant distribution has been performed. SIMS has also been used to search for contaminants at the interface. The electrical measurements are fitted by a theoretical model developed by Dr. Joachim Piprek at the University of California in Santa Barbara. The effect on the electrical properties is investigated for three doping concentrations in the GaAs side, i.e. 2x10 , 1.5xl0 and 6xlO cm-, and two in the InP side, Le. 9xlO and 6xlO cm-• No significant influence of the InP doping concentration can be observed. The electrical conductivity improves for higher doping levels in the GaAs side. It is assumed that the optical losses of a fused interface has a minor importance in the VCSEL device. On the other hand, the heat treatment in combination with the high pressure can give a disordering in the fused structures, which can degrade the optical properties. In the second part of the study the electrical conductivity of the junction has been investigated in fusion experiments at different temperatures, in order to find a minimum fusion temperature with good electrical properties. Above 550°C the electrical conductivity shows no significant changes. Below this temperature the conductivity degrades progressively." @default.
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- W2589076309 date "1997-01-01" @default.
- W2589076309 modified "2023-09-27" @default.
- W2589076309 title "Characterisation of wafer fused InP/GaAs heterojunctions" @default.
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