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• W2589892820 abstract "This chapter aims to provide students/workers in the field of photovoltaics with the valuable information and knowledge needed to understand the physics and operation of high‐efficiency front junction n‐type crystalline silicon solar cells. The surface recombination and passivation mechanisms, and several promising passivation schemes for front and back cell surfaces, are addressed and reviewed. The advanced cell structures and their fabrication schemes to achieve higher efficiency are described and discussed, including selective emitter on the front and locally doped back surface filed or carrier selective rear contact composed of tunnel oxide and phosphorus‐doped polycrystalline silicon thin film. These advanced cell design features have become highly active areas of investigations in the photovoltaic industry for next‐generation production cells." @default.
• W2589892820 created "2017-03-03" @default.
• W2589892820 creator A5050604652 @default.
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• W2589892820 date "2017-02-22" @default.
• W2589892820 modified "2023-10-02" @default.
• W2589892820 title "High‐Efficiency Front Junction n‐Type Crystalline Silicon Solar Cells" @default.
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• W2589892820 doi "https://doi.org/10.5772/65023" @default.
• W2589892820 hasPublicationYear "2017" @default.
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