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- W2591688310 abstract "Epitaxial structures of aluminum gallium nitride (AlGaN) channel high electron mobility transistors (HEMTs) were grown on sapphire and aluminum nitride (AlN) substrates. Reduction in the full width at half maximum of X-ray rocking curve for (101 2) peak of the AlGaN channel layer, owing to the reduction of threading dislocation density, resulted in a sharp decrease in the sheet resistance of 2-dimensional electron gas (2DEG). For AlGaN channel HEMTs, it was found that improvement of the crystalline quality of the AlGaN channel layers was essential to reduce the sheet resistance of 2DEG. The use of AlN substrates improved the crystalline quality of the AlGaN layer and lowered the 2DEG resistance. These results suggested the high potential of AlN substrates for AlGaN channel HEMTs." @default.
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- W2591688310 date "2010-01-01" @default.
- W2591688310 modified "2023-09-24" @default.
- W2591688310 title "Epitaxial Layers of AlGaN Channel HEMTs on AlN Substrates" @default.
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