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- W2592867900 abstract "The crystalline germanium nanostructures were obtained on a silicon surface by the chemical vapor deposition technique using a germanium (IV) iso-propoxide ([Ge(OiPr)4]) metalorganic precursor as a germanium source. As was observed, the one-dimensional (1D) germanium nanostructures on the silicon surface form without using a metal catalyst, meaning that the formation of 1D nanostructures is based not on a vapor–liquid–solid (VLS) growth mechanism, but on self-organization processes which take place on the silicon surfaces during the CVD process of germanium iso-propoxide pyrolysis. Our observation suggests that the non-catalytic growth of germanium nanocolumns is strongly dependent on the CVD process temperature. The germanium phase composition and morphology have been investigated by x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS), and high resolution scanning electron microscopy (HRSEM), respectively. Our results provide a new way to grow 1D germanium nanostructures without contamination by a catalyst, which the vapor–liquid–solid growth mechanism is known to cause, allowing for the application of such materials in micro- and optoelectronics." @default.
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- W2592867900 date "2017-03-02" @default.
- W2592867900 modified "2023-09-27" @default.
- W2592867900 title "Self-organized growth of germanium nanocolumns" @default.
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- W2592867900 doi "https://doi.org/10.1088/2053-1591/aa5ed6" @default.
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