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- W2593200411 abstract "A self-aligned Nickel (Ni) silicide process (Salicide) for n-type ohmic contacts on 4H-SiC is demonstrated and electrically verified in a wafer-scale device process. The key point is to anneal the contacts in two steps. The process is successfully employed on wafer-level and a contact resistivity below 5 × 10−6 Ω·cm2 is achieved. The influence of the proposed process on the oxide quality is investigated and no significant effect is observed. The proposed self-aligned technology eliminates the undesirable effects of the lift-off process. Moreover, it is simple, fast, and manufacturable at wafer-scale which saves time and cost." @default.
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- W2593200411 date "2017-01-01" @default.
- W2593200411 modified "2023-10-09" @default.
- W2593200411 title "A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H-SiC" @default.
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- W2593200411 doi "https://doi.org/10.1149/2.0041705jss" @default.
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