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• W2593225168 abstract "A charge trapping layer that is separated from the primary gate dielectric is implemented on a FinFET SONOS structure. By virtue of the reduced effective oxide thickness of the primary gate dielectric, a strong gate-to-channel coupling is obtained and thus short-channel effects in the proposed device are effectively suppressed. Moreover, a high program/erase speed and a large shift in the threshold voltage are achieved due to the improved charge injection by the reduced effective oxide thickness. The proposed structure has potential for use in high speed flash memory." @default.
• W2593225168 created "2017-03-16" @default.
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• W2593225168 date "2017-03-01" @default.
• W2593225168 modified "2023-10-12" @default.
• W2593225168 title "A SONOS device with a separated charge trapping layer for improvement of charge injection" @default.
• W2593225168 cites W1656616130 @default.
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• W2593225168 doi "https://doi.org/10.1063/1.4978322" @default.
• W2593225168 hasPublicationYear "2017" @default.
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