Matches in SemOpenAlex for { <https://semopenalex.org/work/W2593382010> ?p ?o ?g. }
- W2593382010 endingPage "38" @default.
- W2593382010 startingPage "30" @default.
- W2593382010 abstract "The semiconductor gallium nitride is the material at the centre of energy-efficient solid-state lighting and is becoming increasingly important in high-power and high-frequency electronics. Reducing the dislocation density of gallium nitride planar layers is important for improving the performance and reliability of devices, such as light-emitting diodes and high-electron-mobility transistors. The patterning of selective growth masks is one technique for forcing a three-dimensional growth mode in order to control the propagation of threading defects to the active device layers. The morphology of the three-dimensional growth front is determined by the relative growth rates of the different facets that are formed, and for GaN is typically limited by the slow-growing {1 −1 0 1} facets. We demonstrate how the introduction of nanodash growth windows can be oriented in an array to preserve fast-growing {1 1 −2 2} facets at the early stage of growth to accelerate coalescence of three-dimensional structures into a continuous GaN layer. Cathodoluminescence and Electron Channelling Contrast Imaging methods, both used to measure the threading dislocation density, reveal that the dislocations are organised and form a distinctive pattern according to the underlying mask. By optimising the arrangement of nanodashes and the nanodash density, the threading dislocation density of GaN on sapphire epilayers can be reduced significantly from 109 cm−2 to 3.0 × 107 cm−2. Raman spectroscopy, used to monitor the strain in the overgrown GaN epilayers, shows that the position of the GaN E2H phonon mode peak was reduced as the dash density increases for a sample grown via pendeo-epitaxy whilst no obvious change was recorded for a sample grown via more conventional epitaxial lateral overgrowth. These results show how growth mask design can be used to circumvent limitations imposed by the growth dynamics. Moreover, they have revealed a greater understanding of the influence of the growth process on the dislocation density which will lead to higher performing electronic and optoelectronic devices as a result of the lower dislocation densities achieved." @default.
- W2593382010 created "2017-03-16" @default.
- W2593382010 creator A5002751067 @default.
- W2593382010 creator A5003953963 @default.
- W2593382010 creator A5018748463 @default.
- W2593382010 creator A5025290498 @default.
- W2593382010 creator A5027367676 @default.
- W2593382010 creator A5041150277 @default.
- W2593382010 creator A5049220467 @default.
- W2593382010 creator A5058712506 @default.
- W2593382010 creator A5071514972 @default.
- W2593382010 date "2017-05-01" @default.
- W2593382010 modified "2023-10-09" @default.
- W2593382010 title "Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes" @default.
- W2593382010 cites W1964379029 @default.
- W2593382010 cites W1966957240 @default.
- W2593382010 cites W1968438177 @default.
- W2593382010 cites W1974814256 @default.
- W2593382010 cites W1979125904 @default.
- W2593382010 cites W1988353059 @default.
- W2593382010 cites W1990051094 @default.
- W2593382010 cites W1996138811 @default.
- W2593382010 cites W2000379246 @default.
- W2593382010 cites W2008537344 @default.
- W2593382010 cites W2013873391 @default.
- W2593382010 cites W2019910623 @default.
- W2593382010 cites W2023702374 @default.
- W2593382010 cites W2026179820 @default.
- W2593382010 cites W2037236899 @default.
- W2593382010 cites W2046075076 @default.
- W2593382010 cites W2054225986 @default.
- W2593382010 cites W2057002594 @default.
- W2593382010 cites W2062288621 @default.
- W2593382010 cites W2065134323 @default.
- W2593382010 cites W2070855062 @default.
- W2593382010 cites W2077649547 @default.
- W2593382010 cites W2077818444 @default.
- W2593382010 cites W2088329467 @default.
- W2593382010 cites W2089628716 @default.
- W2593382010 cites W2092738471 @default.
- W2593382010 cites W2101610902 @default.
- W2593382010 cites W2125234351 @default.
- W2593382010 cites W2125550350 @default.
- W2593382010 cites W2136486038 @default.
- W2593382010 cites W2153858244 @default.
- W2593382010 cites W2279613911 @default.
- W2593382010 doi "https://doi.org/10.1016/j.jcrysgro.2017.02.047" @default.
- W2593382010 hasPublicationYear "2017" @default.
- W2593382010 type Work @default.
- W2593382010 sameAs 2593382010 @default.
- W2593382010 citedByCount "11" @default.
- W2593382010 countsByYear W25933820102018 @default.
- W2593382010 countsByYear W25933820102019 @default.
- W2593382010 countsByYear W25933820102020 @default.
- W2593382010 countsByYear W25933820102021 @default.
- W2593382010 countsByYear W25933820102022 @default.
- W2593382010 crossrefType "journal-article" @default.
- W2593382010 hasAuthorship W2593382010A5002751067 @default.
- W2593382010 hasAuthorship W2593382010A5003953963 @default.
- W2593382010 hasAuthorship W2593382010A5018748463 @default.
- W2593382010 hasAuthorship W2593382010A5025290498 @default.
- W2593382010 hasAuthorship W2593382010A5027367676 @default.
- W2593382010 hasAuthorship W2593382010A5041150277 @default.
- W2593382010 hasAuthorship W2593382010A5049220467 @default.
- W2593382010 hasAuthorship W2593382010A5058712506 @default.
- W2593382010 hasAuthorship W2593382010A5071514972 @default.
- W2593382010 hasBestOaLocation W25933820101 @default.
- W2593382010 hasConcept C108225325 @default.
- W2593382010 hasConcept C120665830 @default.
- W2593382010 hasConcept C121332964 @default.
- W2593382010 hasConcept C139861200 @default.
- W2593382010 hasConcept C145148216 @default.
- W2593382010 hasConcept C148869448 @default.
- W2593382010 hasConcept C149792144 @default.
- W2593382010 hasConcept C159122135 @default.
- W2593382010 hasConcept C159985019 @default.
- W2593382010 hasConcept C171250308 @default.
- W2593382010 hasConcept C178790620 @default.
- W2593382010 hasConcept C185592680 @default.
- W2593382010 hasConcept C192562407 @default.
- W2593382010 hasConcept C2778245067 @default.
- W2593382010 hasConcept C2778871202 @default.
- W2593382010 hasConcept C2779227376 @default.
- W2593382010 hasConcept C2780064504 @default.
- W2593382010 hasConcept C2781028716 @default.
- W2593382010 hasConcept C49040817 @default.
- W2593382010 hasConcept C520434653 @default.
- W2593382010 hasConcept C87355193 @default.
- W2593382010 hasConceptScore W2593382010C108225325 @default.
- W2593382010 hasConceptScore W2593382010C120665830 @default.
- W2593382010 hasConceptScore W2593382010C121332964 @default.
- W2593382010 hasConceptScore W2593382010C139861200 @default.
- W2593382010 hasConceptScore W2593382010C145148216 @default.
- W2593382010 hasConceptScore W2593382010C148869448 @default.
- W2593382010 hasConceptScore W2593382010C149792144 @default.
- W2593382010 hasConceptScore W2593382010C159122135 @default.
- W2593382010 hasConceptScore W2593382010C159985019 @default.
- W2593382010 hasConceptScore W2593382010C171250308 @default.