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- W2593559172 abstract "MgZnO is an attractive semiconductor alloy for UV optoelectronic and electronic devices. Due to recent progress and availability of high quality Ga<sub>2</sub>O<sub>3</sub> substrates and its high solar-blind bandgap of ~4.9 eV, it is desirable to investigate its application for solar-blind applications as a potential substrate alternative to sapphire for MgZnO. MgZnO alloys have been grown using plasma-assisted molecular beam epitaxy on Sn doped n-type (010) β-Ga<sub>2</sub>O<sub>3</sub> substrates. It was found MgZnO growth with a MgO buffer layer has a rocksalt lattice structure. <i>In-situ</i> RHEED observations show that the sample grown with a MgO buffer shows two-dimensional growth and a surface roughness with root-mean-square (RMS) below 2 nm. On the other hand, MgZnO grown without a MgO buffer has a mixed phase of rocksalt and wurtzite lattice structures. Additionally, as the initial step for the fabrication of tunable wavelength solar-blind photodetectors, Schottky barrier photodetectors have been fabricated, demonstrating zero (0 V) bias responsivity of 0.1 μA/W (rocksalt MgZnO), 0.7 μA/W (mixed phase MgZnO) and 1.3 μA/W (mixed phase MgZnO) at 230 nm, 310 nm and 335 nm, respectively." @default.
- W2593559172 created "2017-03-16" @default.
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- W2593559172 date "2017-02-24" @default.
- W2593559172 modified "2023-09-23" @default.
- W2593559172 title "MgZnO grown by molecular beam epitaxy on N-Type β-Ga<sub>2</sub>O<sub>3</sub> for UV Schottky barrier solar-blind photodetectors" @default.
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- W2593559172 doi "https://doi.org/10.1117/12.2254937" @default.
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