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• W2593577643 abstract "A scalable electrothermal large-signal AlGaN/GaN HEMTs model for both fundamental and multiharmonics is presented based on the modified Angelov model. To obtain accurate scalability of the electrothermal model, a simple empirical expression is proposed for the geometric and power-dissipation-dependent nonlinear thermal resistance R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</sub> . Only one additional parameter with linear scaling rule is needed in the drain-source current (I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ds</sub> ) model for a scalable large-signal multiharmonic model. The proposed model has been validated by different AlGaN/GaN HEMTs characterized by on-wafer measurements. It shows that the presented scalable model can well predict the dc I-V, pulsed I-V, scattering (S) parameters, and large-signal performance up to third harmonic. Furthermore, to further validation, a C-band power amplifier is designed. The amplifier is realized using the second-harmonic tuned approach to enhance the efficiency. Measurement results show that the GaN high power amplifier (HPA) microwave monolithic integrated circuit (MMIC) exhibits more than 40% power-added efficiency and 60-W output power (P <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>out</sub> ) with associated gain of 25 dB in 5-6 GHz measured at 28-V drain voltage and pulse signal with 100-μs pulsewidth and 10% duty cycle. The area of the chip is 3.2 mm × 5.3 mm (16.96 mm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> ). These results show that the proposed model will be useful for high-efficiency HPA MMIC design." @default.
• W2593577643 created "2017-03-16" @default.
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• W2593577643 date "2017-08-01" @default.
• W2593577643 modified "2023-10-18" @default.
• W2593577643 title "A Scalable Large-Signal Multiharmonic Model of AlGaN/GaN HEMTs and Its Application in C-Band High Power Amplifier MMIC" @default.
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• W2593577643 doi "https://doi.org/10.1109/tmtt.2017.2669984" @default.
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