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- W2593674752 abstract "The channel mobility, $mu _{0}$ , parasitic source/drain resistances, ${R}_{S}/{R}_{D}$ , and virtual gate length, $Delta $ , due to surface traps, at low drain–source bias, ${V}_{text {DS}}$ , are important parameters of high-electron mobility transistors (HEMT’s). DC methods are available to extract these parameters from drain-current, ${I}_{D}$ , versus gate-source voltage, ${V}_{text {GS}}$ , measurements. We report a comparative study of two such methods based on the linear ${I}_{D}-{V}_{text {GS}}$ approximation, from the viewpoint of device modeling, process monitoring, and physical understanding. One method yields constant values of $mu _{0}$ and ${R}_{S}+ {R}_{D}$ averaged over the ${V}_{text {GS}}$ range, while the other yields variations of $mu _{0}$ , ${R}_{S}$ , ${R}_{D}$ , and $Delta $ with ${V}_{text {GS}}$ . The study reveals some new details of these methods, and discusses their results on a range of GaAs and GaN HEMTs." @default.
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- W2593674752 date "2017-04-01" @default.
- W2593674752 modified "2023-10-14" @default.
- W2593674752 title "Comparison of Two DC Extraction Methods for Mobility and Parasitic Resistances in a HEMT" @default.
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- W2593674752 doi "https://doi.org/10.1109/ted.2017.2663764" @default.
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