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• W2593883789 abstract "Abstract The high temperature DC characteristics of a high-voltage bulk Si lateral insulated-gate bipolar transistor in junction isolation (JI-LIGBT) technology is studied intensively in this paper. The current density distribution in the off-state at different temperatures of three types of device structure is compared. By using the Quasi-vertical DMOSFET (QVDMOS or multi-channel, MC) structure, the electron injection from the channel into the n-drift region is significantly enhanced, and the current density is improved. In addition, by extending the p-top layer to the NPN anode not only improves the breakdown voltage but also reduces the substrate current as well as ensures high temperature stability." @default.
• W2593883789 created "2017-03-16" @default.
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• W2593883789 date "2017-06-01" @default.
• W2593883789 modified "2023-10-01" @default.
• W2593883789 title "The high temperature DC characteristics of a high voltage lateral insulated-gate bipolar transistors with NPN anode in junction isolation technology" @default.
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• W2593883789 doi "https://doi.org/10.1016/j.sse.2017.03.010" @default.
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