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• W2594777096 endingPage "10" @default.
• W2594777096 startingPage "1" @default.
• W2594777096 abstract "Despite the technological importance of silicon quantum dots (Si QDs) which are solely made of abundant and nontoxic Si, Si-QD light-emitting diodes (LEDs) clearly lag behind those based on other QDs, especially Cd- or Pb-containing QDs. It is imperative that novel measures should be taken to boost the performance of Si-QD LEDs. Here, we demonstrate that Si-QD LEDs can work much more efficiently after the use of interlayers between indium tin oxide (ITO) and poly(ethylene-dioxythiophene):polystyrene sulphonate (PEDOT:PSS) to enhance the hole transport of the devices. The interlayer of dipyrazino (2, 3-f:2 ′, 3 ′-h) quinoxaline-2,3,6,7,10,11-hexacarbonitrile (HAT-CN) or MoO3 increases the work function of ITO and improves the band alignment, leading to better hole injection from ITO to PEDOT:PSS. The resulting mitigated charge unbalance causes both the external quantum efficiency (EQE) and stability of Si-QD LEDs to significantly increase (up to ∼170% for EQE and ∼240% for device half-lifetime). The highest EQE of ∼2.4% obtained in the current work is among the best values that have been reported for Si-QD LEDs. Even without encapsulation, the device half-lifetime is up to ∼8.5 h. The enhancement of the hole transport induced by MoO3 is more significant than that induced by HAT-CN. Therefore, MoO3 more significantly enhances the performance of Si-QD LEDs than HAT-CN." @default.
• W2594777096 created "2017-03-16" @default.
• W2594777096 creator A5017452803 @default.
• W2594777096 creator A5042810157 @default.
• W2594777096 creator A5043023473 @default.
• W2594777096 creator A5051102773 @default.
• W2594777096 creator A5076345724 @default.
• W2594777096 creator A5076396589 @default.
• W2594777096 creator A5079610369 @default.
• W2594777096 creator A5080453915 @default.
• W2594777096 creator A5083979390 @default.
• W2594777096 creator A5086861120 @default.
• W2594777096 creator A5088557881 @default.
• W2594777096 date "2017-04-01" @default.
• W2594777096 modified "2023-09-26" @default.
• W2594777096 title "Silicon-Quantum-Dot Light-Emitting Diodes With Interlayer-Enhanced Hole Transport" @default.
• W2594777096 cites W1039356044 @default.
• W2594777096 cites W1116042064 @default.
• W2594777096 cites W1410889432 @default.
• W2594777096 cites W1575590887 @default.
• W2594777096 cites W1841159091 @default.
• W2594777096 cites W1854729603 @default.
• W2594777096 cites W1882696339 @default.
• W2594777096 cites W1936604507 @default.
• W2594777096 cites W1966986927 @default.
• W2594777096 cites W1974326060 @default.
• W2594777096 cites W1976026963 @default.
• W2594777096 cites W1982701793 @default.
• W2594777096 cites W1989576841 @default.
• W2594777096 cites W1993250961 @default.
• W2594777096 cites W1994466304 @default.
• W2594777096 cites W1997591318 @default.
• W2594777096 cites W1999516243 @default.
• W2594777096 cites W1999553325 @default.
• W2594777096 cites W2007653298 @default.
• W2594777096 cites W2013987206 @default.
• W2594777096 cites W2017633570 @default.
• W2594777096 cites W2017740115 @default.
• W2594777096 cites W2037618599 @default.
• W2594777096 cites W2041438258 @default.
• W2594777096 cites W2045355715 @default.
• W2594777096 cites W2047251603 @default.
• W2594777096 cites W2065572677 @default.
• W2594777096 cites W2067283850 @default.
• W2594777096 cites W2071451731 @default.
• W2594777096 cites W2073486868 @default.
• W2594777096 cites W2088702578 @default.
• W2594777096 cites W2089829755 @default.
• W2594777096 cites W2098442311 @default.
• W2594777096 cites W2111128148 @default.
• W2594777096 cites W2126008423 @default.
• W2594777096 cites W2126320352 @default.
• W2594777096 cites W2134605996 @default.
• W2594777096 cites W2138463916 @default.
• W2594777096 cites W2142673369 @default.
• W2594777096 cites W2144374920 @default.
• W2594777096 cites W2146490414 @default.
• W2594777096 cites W2178759321 @default.
• W2594777096 cites W2203055782 @default.
• W2594777096 cites W2254622568 @default.
• W2594777096 cites W2255444962 @default.
• W2594777096 cites W2260116722 @default.
• W2594777096 cites W2278608670 @default.
• W2594777096 cites W2288322309 @default.
• W2594777096 cites W2315529665 @default.
• W2594777096 cites W2325464361 @default.
• W2594777096 cites W2327714552 @default.
• W2594777096 cites W2336371078 @default.
• W2594777096 cites W2366991280 @default.
• W2594777096 cites W2396130119 @default.
• W2594777096 cites W2409319761 @default.
• W2594777096 cites W2412637579 @default.
• W2594777096 cites W2509410876 @default.
• W2594777096 cites W2518050598 @default.
• W2594777096 cites W4244316432 @default.
• W2594777096 cites W847999406 @default.
• W2594777096 doi "https://doi.org/10.1109/jphot.2017.2671023" @default.
• W2594777096 hasPublicationYear "2017" @default.
• W2594777096 type Work @default.
• W2594777096 sameAs 2594777096 @default.
• W2594777096 citedByCount "23" @default.
• W2594777096 countsByYear W25947770962017 @default.
• W2594777096 countsByYear W25947770962018 @default.
• W2594777096 countsByYear W25947770962019 @default.
• W2594777096 countsByYear W25947770962020 @default.
• W2594777096 countsByYear W25947770962022 @default.
• W2594777096 crossrefType "journal-article" @default.
• W2594777096 hasAuthorship W2594777096A5017452803 @default.
• W2594777096 hasAuthorship W2594777096A5042810157 @default.
• W2594777096 hasAuthorship W2594777096A5043023473 @default.
• W2594777096 hasAuthorship W2594777096A5051102773 @default.
• W2594777096 hasAuthorship W2594777096A5076345724 @default.
• W2594777096 hasAuthorship W2594777096A5076396589 @default.
• W2594777096 hasAuthorship W2594777096A5079610369 @default.
• W2594777096 hasAuthorship W2594777096A5080453915 @default.
• W2594777096 hasAuthorship W2594777096A5083979390 @default.
• W2594777096 hasAuthorship W2594777096A5086861120 @default.
• W2594777096 hasAuthorship W2594777096A5088557881 @default.

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