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• W2594863616 abstract "The growth of self-assembled, vertically oriented and uniform nanowires (NWs) has remained a challenge for efficient light-emitting devices. Here, we demonstrate dislocation-free AlGaN NWs with spontaneous coalescence, which are grown by plasma-assisted molecular beam epitaxy on an n-type doped silicon (100) substrate. A high density of NWs (filling factor >95%) was achieved under optimized growth conditions, enabling device fabrication without planarization using ultraviolet (UV)-absorbing polymer materials. UV-B (280-320 nm) light-emitting diodes (LEDs), which emit at ∼303 nm with a narrow full width at half maximum (FWHM) (∼20 nm) of the emission spectrum, are demonstrated using a large active region (active region/NW length-ratio ∼50%) embedded with 15 stacks of AlxGa1-xN/AlyGa1-yN quantum-disks (Qdisks). To improve the carrier injection, a graded layer is introduced at the AlGaN/GaN interfaces on both p- and n-type regions. This work demonstrates a viable approach to easily fabricate ultra-thin, efficient UV optoelectronic devices on low-cost and scalable silicon substrates." @default.
• W2594863616 created "2017-03-16" @default.
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• W2594863616 date "2017-01-01" @default.
• W2594863616 modified "2023-10-02" @default.
• W2594863616 title "Self-planarized quantum-disks-in-nanowires ultraviolet-B emitters utilizing pendeo-epitaxy" @default.
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• W2594863616 doi "https://doi.org/10.1039/c7nr00006e" @default.
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