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- W2594873933 abstract "This paper which is based on a project between Applied Materials and the Institute of Materials Research and Engineering (IMRE) describes a novel methodology to characterize the fracture toughness of silicon nitride (SiN) thin films deposited at ultra-low temperatures of 100–180°C by the Plasma Enhanced Chemical Vapour Deposition (PECVD) method. SiN thin films were deposited under varying conditions (thickness, deposition temperature and plasma power) on silicon substrates using Applied Materials' PRODUCER® Avila™ PECVD chamber, and characterized using the nanoindentation method for fracture toughness values. The nanoindentation method was optimized for the ultra-low temperature PECVD SiN films, which produced consistent results that enabled better understanding of the mechanical properties of ultra-low temperature SiN films." @default.
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- W2594873933 date "2016-11-01" @default.
- W2594873933 modified "2023-09-23" @default.
- W2594873933 title "Novel way of characterizing fracture toughness of ultra-low temperature SiN films by nanoindentation" @default.
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- W2594873933 doi "https://doi.org/10.1109/eptc.2016.7861475" @default.
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