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- W2595572209 abstract "The perfection of GaAs single crystals can be controlled by doping the GaAs with In, at a level of about 5x10 19 -1x10 20 /cm 3 , in single crystals grown by the LEC process. It has been observed that In doping at this level reduces the grown in dislocation density from 10 4 -l0 5 to ≤ 10 2 /cm 2 and results in a large increase in high temperature strength . However, the role of In in dislocation density reduction is not clearly understood. Therefore, a systematic study has been performed with the help of high temperature deformation of In-doped and undoped GaAs single crystals followed by dislocation structural characterization by transmission electron microscopy of the deformed specimens. Here, some results of dislocation studies performed by TEM are descri bed. Samples were examined in a JEOL JEM 200CX transmission electron microscope equipped with a double tilt goniometer stage. The standard g.b criterion was employed for characterization of dislocations. Dark-field weak beam pictures were taken for characterization of partial dislocations and dipoles." @default.
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- W2595572209 date "1988-01-01" @default.
- W2595572209 modified "2023-09-26" @default.
- W2595572209 title "TEM studies of dislocations in deformed Ga1-xInxAs single crystals" @default.
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- W2595572209 doi "https://doi.org/10.1017/s0424820100106569" @default.
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