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• W2596501470 abstract "We report on multi-level non-volatile organic transistor-based memory using pentacene semiconductor and a lithium-ion-encapsulated fullerene (Li+@C60) as a charge trapping layer. Memory organic field-effect transistors (OFETs) with a Si++/SiO2/Li+@C60/Cytop/Pentacene/Cu structure exhibited a performance of p-type transistor with a threshold voltage (Vth) of −5.98 V and a mobility (μ) of 0.84 cm2 V−1 s−1. The multi-level memory OFETs exhibited memory windows (ΔVth) of approximate 10 V, 16 V, and 32 V, with a programming gate voltage of 150 V for 0.5 s, 5 s, and 50 s, and an erasing gate voltage of −150 V for 0.17 s, 1.7 s, and 17 s, respectively. Four logic states were clearly distinguishable in our multi-level memory, and its data could be programmed or erased many times. The multi-level memory effect in our OFETs is ascribed to the electron-trapping ability of the Li+@C60 layer." @default.
• W2596501470 created "2017-03-23" @default.
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• W2596501470 date "2017-06-01" @default.
• W2596501470 modified "2023-10-17" @default.
• W2596501470 title "Multi-level non-volatile organic transistor-based memory using lithium-ion-encapsulated fullerene as a charge trapping layer" @default.
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• W2596501470 doi "https://doi.org/10.1016/j.orgel.2017.03.018" @default.
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