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• W2596604890 endingPage "175707" @default.
• W2596604890 startingPage "175707" @default.
• W2596604890 abstract "High performance trilayer memory capacitors with a floating gate of a single layer of Ge quantum dots (QDs) in HfO2 were fabricated using magnetron sputtering followed by rapid thermal annealing (RTA). The layer sequence of the capacitors is gate HfO 2/floating gate of single layer of Ge QDs in HfO 2/tunnel HfO 2/p-Si wafers. Both Ge and HfO2 are nanostructured by RTA at moderate temperatures of 600-700 °C. By nanostructuring at 600 °C, the formation of a single layer of well separated Ge QDs with diameters of 2-3 nm at a density of 4-5 × 1015 m-2 is achieved in the floating gate (intermediate layer). The Ge QDs inside the intermediate layer are arranged in a single layer and are separated from each other by HfO2 nanocrystals (NCs) about 8 nm in diameter with a tetragonal/orthorhombic structure. The Ge QDs in the single layer are located at the crossing of the HfO2 NCs boundaries. In the intermediate layer, besides Ge QDs, a part of the Ge atoms is segregated by RTA at the HfO2 NCs boundaries, while another part of the Ge atoms is present inside the HfO2 lattice stabilizing the tetragonal/orthorhombic structure. The fabricated capacitors show a memory window of 3.8 ± 0.5 V and a capacitance-time characteristic with 14% capacitance decay in the first 3000-4000 s followed by a very slow capacitance decrease extrapolated to 50% after 10 years. This high performance is mainly due to the floating gate of a single layer of well separated Ge QDs in HfO2, distanced from the Si substrate by the tunnel oxide layer with a precise thickness." @default.
• W2596604890 created "2017-03-23" @default.
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• W2596604890 date "2017-04-04" @default.
• W2596604890 modified "2023-09-26" @default.
• W2596604890 title "Single layer of Ge quantum dots in HfO₂ for floating gate memory capacitors" @default.
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• W2596604890 doi "https://doi.org/10.1088/1361-6528/aa66b7" @default.
• W2596604890 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/28291015" @default.
• W2596604890 hasPublicationYear "2017" @default.
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