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• W2596747487 abstract "We report on the fabrication and characterization of radial tunnel diodes based on InP(n+)/InGaAs(p+) core-shell nanowires, where the effect of Zn-dopant precursor flow on the electrical properties of the devices is evaluated. Selective and local etching of the InGaAs shell is employed to access the nanowire core in the contact process. Devices with an n+-p doping profile show normal diode rectification, whereas n+-p+ junctions exhibit typical tunnel diode characteristics with peak-to-valley current ratios up to 14 at room temperature and 100 at 4.2 K. A maximum peak current density of 28 A/cm2 and a reverse current density of 7.3 kA/cm2 at VSD = −0.5 V are extracted at room temperature after normalization with the effective junction area." @default.
• W2596747487 created "2017-03-23" @default.
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• W2596747487 date "2017-03-13" @default.
• W2596747487 modified "2023-09-27" @default.
• W2596747487 title "Radial tunnel diodes based on InP/InGaAs core-shell nanowires" @default.
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• W2596747487 doi "https://doi.org/10.1063/1.4978271" @default.
• W2596747487 hasPublicationYear "2017" @default.
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