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- W2597019836 abstract "Abstract The thermoelectric transport properties of atomic layer deposited (ALD) gallium doped zinc oxide (GZO) thin films were investigated to identify their potential as a thermoelectric material. The overall thermoelectric properties, such as the Seebeck coefficient and electrical conductivity, were probed as a function of Ga concentration in ZnO. The doping concentration was tuned by varying the ALD cycle ratio of zinc oxide and gallium oxide. The GZO was deposited at 250 °C and the doping concentration was modified from 1% to 10%. Sufficient thermoelectric properties appeared at a doping concentration of 1%. The crystallinity and electronic state, such as the effective mass, were investigated to determine the enhancement of the thermoelectric properties. The efficient Ga doping of GZO showed a Seebeck coefficient of 60 μV/K and an electrical conductivity of 1808.32 S/cm, with a maximum power factor of 0.66 mW/mK 2 ." @default.
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- W2597019836 date "2017-07-01" @default.
- W2597019836 modified "2023-09-24" @default.
- W2597019836 title "Studies of thermoelectric transport properties of atomic layer deposited gallium-doped ZnO" @default.
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- W2597019836 doi "https://doi.org/10.1016/j.ceramint.2017.03.087" @default.
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