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- W2597705736 abstract "High quality high Tc thin films have traditionally been deposited onto a small subset of substrates, most of which have limited technological use. Substrates such as SrTiO3 and LaAlO3 yield films of exceptional quality in terms of Tc and Jc, but have undesirable properties, such as twins and relatively high dielectric constants. These specialty substrates also tend to be quite expensive, and are not readily available in large sizes. Nearly all of the technologically important substrates require multilayer deposition schemes in order to yield high quality superconductors. We have demonstrated the epitaxial growth of YBCO and/or GdBCO films on R‐plane sapphire, YAlO3, MgF2, YIG, Si, and single crystal diamond. With the exception of the last two substrates mentioned, we have obtained high quality films. On Si and diamond, we have obtained films with Tc≳85 K and 80 K, respectively, which are suitable for some bolometric applications. Films on sapphire have yielded high performance passive microwave devices. MgF2, with its low dielectric constant and loss tangent, is ideally suited for applications in the mm‐wave region and for low cross‐talk digital interconnects. Non‐reciprocal devices requiring high quality films on magnetic substrates will be fabricated using YIG." @default.
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- W2597705736 date "1993-01-01" @default.
- W2597705736 modified "2023-09-24" @default.
- W2597705736 title "High Tc thin films deposited by PLD onto technologically important substrates" @default.
- W2597705736 doi "https://doi.org/10.1063/1.44863" @default.
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