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• W2599162984 abstract "We describe a method for transferring ultra large-scale CVD-grown graphene sheets. These samples can be fabricated as large as several cm$^2$ and are characterized by magneto-transport measurements on SiO$_2$ substrates. The process we have developed is highly effective and limits damage to the graphene all the way through metal liftoff, as shown in carrier mobility measurements and the observation of the quantum Hall effect. The charge-neutral point is shown to move drastically to near-zero gate voltage after a 2-step post-fabrication annealing process, which also allows for greatly diminished hysteresis." @default.
• W2599162984 created "2017-04-07" @default.
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• W2599162984 date "2017-03-13" @default.
• W2599162984 modified "2023-10-16" @default.
• W2599162984 title "Upscaling high-quality CVD graphene devices to 100 micron-scale and beyond" @default.
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• W2599162984 doi "https://doi.org/10.1063/1.4978643" @default.
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