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- W2599286670 abstract "In this paper, we report the poly-silicon planarization with the introduction of the matrix-temperature controller, named as Hydra, which is equipped in one commercial inductive coupled plasma (ICP) etch tool. The 3sigma of poly-silicon thickness within improved more than 60% and the uniformity is very close to current planar technology node. The temperature dependence is 29.0A/℃. The planarization results show better performance than gas cluster ion beam (GCIB) method as reported. For more common use, an advanced process control is also proposed to overcome the difference of incoming after CMP process. The CMP process always shows a major radical thickness map, which can be compensated by tuning radical etch rate map by changing process parameters. The Hydra based etch planarization technology can also be extend to other process as ILD etch back with suitable etch process. This technology will be very power in the future 3D transistors for planarization." @default.
- W2599286670 created "2017-04-07" @default.
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- W2599286670 date "2017-04-21" @default.
- W2599286670 modified "2023-09-23" @default.
- W2599286670 title "Poly-Si Planarization by ICP Plasma Etch at FinFET Technology" @default.
- W2599286670 doi "https://doi.org/10.1149/07703.0071ecst" @default.
- W2599286670 hasPublicationYear "2017" @default.
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