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- W2600504477 abstract "In this paper we present and compare the results obtained from semi-classical and quantum mechanical simulation for a double gate MOSFET structure to analyze the electrostatics and carrier dynamics of this device. The geometries like gate length, body thickness of this device have been chosen according to the ITRS specification for the different technology nodes. We have shown the extent of deviation between the semi- classical and quantum mechanical results and hence the need of quantum simulations for the promising nanoscale devices in the future technology nodes predicted in ITRS." @default.
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- W2600504477 date "2008-03-21" @default.
- W2600504477 modified "2023-09-22" @default.
- W2600504477 title "Necessity for quatum simulation for future technology nodes" @default.
- W2600504477 hasPublicationYear "2008" @default.
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