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• W2600647059 abstract "Abstract Topological insulator (Bi 0.06 Sb 0.94 ) 2 Te 3 thin films grown by molecular beam epitaxy have been capped in-situ with a 2 nm Al film to conserve the pristine topological surface states. Subsequently, a shadow mask - structured by means of focus ion beam - was in-situ placed underneath the sample to deposit a thick layer of Al on well-defined microscopically small areas. The 2 nm thin Al layer fully oxidizes after exposure to air and in this way protects the TI surface from degradation. The thick Al layer remains metallic underneath a 3–4 nm thick native oxide layer and therefore serves as (super-) conducting contacts. Superconductor-Topological Insulator-Superconductor junctions with lateral dimensions in the nm range have then been fabricated via an alternative stencil lithography technique. Despite the in-situ deposition, transport measurements and transmission electron microscope analysis indicate a low transparency, due to an intermixed region at the interface between topological insulator thin film and metallic Al." @default.
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• W2600647059 date "2017-11-01" @default.
• W2600647059 modified "2023-09-23" @default.
• W2600647059 title "Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films" @default.
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• W2600647059 doi "https://doi.org/10.1016/j.jcrysgro.2017.03.035" @default.
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