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- W2600696719 abstract "Abstract Dual diodes with embedded silicon controlled rectifier (DD-SCR) for high-speed applications are presented. A new DD-SCR topography is shown to exhibit a high failure current (It2), small on-state resistance (RON), low voltage overshoot and low parasitic capacitance. This is a preferred device option for broadband high-speed data converter applications in advanced 28 nm CMOS processes. A comprehensive device characterization demonstrates the design tradeoffs and the superior ESD performance in relation to the devices' variations capacitance in the sub 40 fF range." @default.
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- W2600696719 date "2017-12-01" @default.
- W2600696719 modified "2023-10-08" @default.
- W2600696719 title "ESD protection structure with reduced capacitance and overshoot voltage for high speed interface applications" @default.
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- W2600696719 doi "https://doi.org/10.1016/j.microrel.2017.03.014" @default.
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