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• W2604523645 abstract "In this study, we have fabricated the bipolar transparent resistive random access memory (TRRAM) based in complex oxide amorphous STO films as dielectric layer grown by pulsed laser deposition (PLD) technique, and semiconducting In-Ga-Zn-O films were employed as electrode. The experimental results show that the average transmittance of the device is above 82.7% in the visible region (400-800nm). The device can be repeated more than 260 times, and the high and low resistance state can be held without obvious degradation within 5×104s. The conduction mechanisms at HRS and LRS were both attributed to the space charge limited current. And the RS mechanism is related to trapping and releasing of electrons which impact the current level though the cell for changing the resistance state." @default.
• W2604523645 created "2017-04-14" @default.
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• W2604523645 date "2017-01-01" @default.
• W2604523645 modified "2023-10-12" @default.
• W2604523645 title "Bipolar transparent resistive switching based in a-IGZO/STO/a-IGZO structure for nonvolatile memory application" @default.
• W2604523645 cites W1506538299 @default.
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• W2604523645 doi "https://doi.org/10.1063/1.4979776" @default.
• W2604523645 hasPublicationYear "2017" @default.
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