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• W2605931680 abstract "Surface trap states hinder charge transfer and transport properties in TiO2 nanorods (NRs), limiting its application on optoelectronic devices. Here, we study the interfacial processes between rutile TiO2 NR and CdSe quantum dots (QDs) using TiO2 interlayer passivation treatments. Anatase or rutile TiO2 thin layers were deposited on an NR surface by two wet-chemical deposition treatments. Reduced interfacial charge recombination between NRs and CdSe QDs was observed by electrochemical impedance spectroscopy with the introduction of TiO2 thin film interlayers compared to bare TiO2 NRs. These results can be ascribed to in-gap trap state passivation of the TiO2 NR surface, which led to an increase in open circuit voltage. Moreover, the rutile thin layer was more efficient than anatase to promote a higher photo-excited electron transfer from CdSe QDs to TiO2 NRs due to a large driving force for charge injection, as confirmed by surface photovoltage spectroscopy." @default.
• W2605931680 created "2017-04-28" @default.
• W2605931680 creator A5046081878 @default.
• W2605931680 creator A5090861405 @default.
• W2605931680 creator A5083379178 @default.
• W2605931680 date "2017-05-22" @default.
• W2605931680 modified "2023-10-03" @default.
• W2605931680 title "Optimization of charge transfer and transport processes at the CdSe quantum dots/TiO₂ nanorod interface by TiO₂ interlayer passivation" @default.
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• W2605931680 doi "https://doi.org/10.1088/1361-6463/aa6e7c" @default.
• W2605931680 hasPublicationYear "2017" @default.
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