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• W2606118387 startingPage "1750011" @default.
• W2606118387 abstract "Successful application of the LiNbO 3 -based heterostructures in the integrated electronics and optoelectronics is mostly determined by the charge transport phenomenon in the LiNbO 3 since this affects their basic parameters. Depending on the particular conditions (temperature, applied field, properties of LiNbO 3 /substrate heterojunction, etc.), various conduction mechanisms occur simultaneously and primarily, they can be divided into two major groups: contact-limited and bulk-limited. Identification and study of the charge transport mechanisms allow deriving the vital physical properties such as the barrier height at LiNbO 3 film/substrate interface, charged defect concentration, traps spacing as well as type and drift mobility of the carriers in the LiNbO 3 films. In this paper, the conduction mechanisms in LiNbO 3 -based heterostructures are discussed in detail and electrical parameters are derived." @default.
• W2606118387 created "2017-04-28" @default.
• W2606118387 creator A5020112641 @default.
• W2606118387 date "2017-03-01" @default.
• W2606118387 modified "2023-09-24" @default.
• W2606118387 title "Charge transport in LiNbO₃-based heterostructures" @default.
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• W2606118387 doi "https://doi.org/10.1142/s0218863517500114" @default.
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