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- W2607148630 abstract "Heterostructures consisting of two-dimensional (2D) materials and conventional semiconductors have attracted a lot of attention due to their application in novel device concepts. In this work, we investigated the lateral transport characteristics of graphene/germanium heterostructures and compared them with the transport properties of graphene on SiO2. The heterostructures were fabricated by transferring a single layer of graphene (Gr) onto a lightly doped germanium (Ge) (100) substrate. The field-effect measurements revealed a shift in the Dirac voltage of Gr on the Ge substrates compared to that of the Gr on SiO2. Transfer length model measurements show a significant difference in the sheet resistance of Gr on Ge compared to that of the Gr on SiO2. The results from the electrical and structural characterization suggest that a charge transfer in the order of 1012 cm–2 occurs between Gr and Ge resulting in a doping effect in the graphene sheet. A compact electrostatic model extracted the key electronic properties of the Gr/Ge interface. This study provides valuable insights into the electronic properties of Gr on Ge, which are vital to the development of novel devices based on mixed 2D and 3D structures." @default.
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- W2607148630 date "2017-04-20" @default.
- W2607148630 modified "2023-10-17" @default.
- W2607148630 title "Vertical Charge Transfer and Lateral Transport in Graphene/Germanium Heterostructures" @default.
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- W2607148630 doi "https://doi.org/10.1021/acsami.7b01424" @default.
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