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• W2608240299 abstract "To address the fabrication complexity and cost of nanoscale devices, a dual material control gate charge-plasma-based tunnel FET (DMCG-CPTFET) is presented for the first time for the suppression of ambipolarity and improvement of analog/radio frequency (RF), and linearity performance. The formation of p <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> source and n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> drain regions in DMCG-CPTFET is done by the deposition of platinum (work-function = 5.93 eV) and hafnium (work-function = 3.9 eV) materials, respectively, over the silicon body. Hence, the proposed device avoids doping control issues, random dopant fluctuations, and it neither needs abrupt doping nor high thermal budget, which makes fabrication process simpler. In DMCG-CPTFET, the gate is divided into three segments, namely, tunneling gate (M <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1</sub> ), control gate (M <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ), and auxiliary gate (M <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> ) with their equivalent work functions as φ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1</sub> , φ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> , and φ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> , respectively. However, we have explored three different combinations of work-functions to achieve better performance in terms of DC, analog/RF, and linearity metrics. In various possibilities of devices, ATLAS device simulations show that the DMCG-CPTFET attains optimum result with φ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1</sub> = φ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> <; φ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> , where φ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1</sub> is used at source side to improve the ON-state current, whereas φ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> (same as φ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1</sub> ) is considered at drain side in order to suppress the ambipolarity." @default.
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• W2608240299 date "2017-06-01" @default.
• W2608240299 modified "2023-09-28" @default.
• W2608240299 title "A Barrier Controlled Charge Plasma-Based TFET With Gate Engineering for Ambipolar Suppression and RF/Linearity Performance Improvement" @default.
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• W2608240299 doi "https://doi.org/10.1109/ted.2017.2693679" @default.
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