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• W2608504342 abstract "Abstract Nanocrystalline In 1−x Cu x P thin films (0 ≤ x ≤ 0.5) have been deposited on quartz substrates by a Metal-Organic Chemical Vapor Deposition (MOCVD) technique. The effect of the copper ion content on the structural crystal lattice, morphology and optical behavior of the InP thin films was assessed using X-ray diffraction, scanning electron microscopy, atomic force microscopy, Raman spectroscopy and spectrophotometry. All films exhibited a crystalline cubic zinc blende structure, inferring the solubility of the Cu atoms in the InP crystal structure. The XRD patterns demonstrated that the inclusion of Cu atoms into the InP films forced the nanoparticles in the films to grow along the (1 1 1) direction. The AFM topography showed that the Cu ions reduce the surface roughness of deposited films. The Raman spectra of the deposited films contain the first and second order anti-stoke Γ TO , Γ LO , Χ LO  + Χ TO , 2Γ TO , and Γ LO  + Γ TO bands which are characteristic of the InP crystalline structure. The intensities of these bands decreased with increasing the content of the Cu atoms in the InP crystals implying the creation of a stacking fault density in the InP crystal structure. The In 1−x Cu x P thin films have shown high optical transparency of 90%. An increase of the optical band gap from 1.38 eV to 1.6 eV was assigned to the increase of the amount of Cu ions in the InP films. The In 0.5 Cu 0.5 P thin film exhibited remarkable optical conductivity with very low dissipation factor which makes it a promising buffer window for solar energy applications." @default.
• W2608504342 created "2017-05-05" @default.
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• W2608504342 date "2017-10-01" @default.
• W2608504342 modified "2023-09-24" @default.
• W2608504342 title "Structure, morphology and Raman and optical spectroscopic analysis of In 1−x Cu x P thin films grown by MOCVD technique for solar cell applications" @default.
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• W2608504342 doi "https://doi.org/10.1016/j.optlastec.2017.04.017" @default.
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