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- W2611115557 abstract "InGaN/GaN multiple quantum wells (MQWs) were grown with hydrogen treatment at well/barrier upper interface under different temperatures. Hydrogen treatment temperature greatly affects the characteristics of MQWs. Hydrogen treatment conducted at 850 °C improves surface and interface qualities of MQWs, as well as significantly enhances room temperature photoluminescence (PL) intensity. In contrast, the sample with hydrogen treatment at 730 °C shows no improvement, as compared with the reference sample without hydrogen treatment. On the basis of temperature-dependent PL characteristics analysis, it is concluded that hydrogen treatment at 850 °C is more effective in reducing defect-related non-radiative recombination centers in MQWs region, yet has little impact on carrier localization. Hence, hydrogen treatment temperature is crucial to improving the quality of InGaN/GaN MQWs." @default.
- W2611115557 created "2017-05-12" @default.
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- W2611115557 date "2017-05-02" @default.
- W2611115557 modified "2023-10-02" @default.
- W2611115557 title "Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells" @default.
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- W2611115557 doi "https://doi.org/10.1186/s11671-017-2109-6" @default.
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