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- W2611215067 abstract "In this work we study cost-effective cleaning solutions applied to interdigitated back-contacted solar cells (IBC), which are passivated by means of atomic layer deposited Al 2 O 3 films. The cleaning baths must guarantee very clean surfaces as well as relatively low etching Al 2 O 3 rates to avoid excessive undercutting at the edges of strip-like regions. We compare the standard high-cost cleaning procedure used in the microelectronic industry (RCA1/2) with simpler cleaning baths based on H 2 O/NH 3 /H 2 O 2 mixtures considering different temperatures. The best option is the RCA1/2 sequence yielding surface recombination velocities below 4 cm/s but with a total Al 2 O 3 etch around 500 nm after the cleaning stage. Nevertheless very simple and less aggressive cleaning baths performed at only 45 °C obtain a relatively good surface passivation quality, achieving S eff values of 20 ± 5 cm/s reducing the under etch to only 80 nm." @default.
- W2611215067 created "2017-05-12" @default.
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- W2611215067 date "2017-02-01" @default.
- W2611215067 modified "2023-09-27" @default.
- W2611215067 title "Cost-effective cleaning solutions based on H<inf>2</inf>O/NH<inf>3</inf>/H<inf>2</inf>O<inf>2</inf> mixtures for ALD Al<inf>2</inf>O<inf>3</inf> passivated IBC c-Si solar cells" @default.
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- W2611215067 doi "https://doi.org/10.1109/cde.2017.7905228" @default.
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