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- W2613142410 abstract "Abstract In this study, by introducing reflex process into the precursor preparation and inkjet printing for high-quality top electrode deposition, we produced a solution-processed tungsten oxide based memristor, which not only overcomes the technical challenges in previous reports but also leads to an important step toward the development of high-performance memristor at low cost and ambient pressure. Various characteristics of synaptic plasticity and learning behaviors have been effectively demonstrated in the stacked device of Ag/WO 3 /FTO including short-term plasticity (STP) and long-term plasticity (LTP). A detailed investigation of short-term plasticity to long-term plasticity transition was given by changing the pulse number and strength. The memristive behavior in this work can be attributed to the formation/dissolution of Ag percolation paths between two electrodes. With regard to these promising features, the developed memristor may have great potential applications for bio-inspired neuromorphic devices." @default.
- W2613142410 created "2017-05-19" @default.
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- W2613142410 date "2017-09-01" @default.
- W2613142410 modified "2023-10-17" @default.
- W2613142410 title "Synaptic plasticity and learning behavior in transparent tungsten oxide-based memristors" @default.
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- W2613142410 doi "https://doi.org/10.1016/j.matdes.2017.05.022" @default.
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