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• W2614303347 startingPage "4590" @default.
• W2614303347 abstract "Abstract The long‐term stability of electronic devices at high temperatures and electric fields might be strongly influenced by the electronic properties of interfaces. A modification of Schottky barrier heights at electrode interfaces of functional oxides upon changes of the external oxygen partial pressure is well documented in literature. In this work, an experimental approach using X‐ray photoelectron spectroscopy is presented, which enables to study transient changes in the Schottky barrier height induced by electrical degradation. A rise of the Fermi level at the RuO 2 cathode interface of Fe‐doped SrTiO 3 single crystals by 0.6 eV is observed in the course of resistance degradation. The change of the effective barrier height is associated to the migration of oxygen vacancies towards the cathode and accompanied by the observed reduction of Ti. Different scenarios are discussed to explain the origin of barrier modification and the localization of the reduced Ti." @default.
• W2614303347 created "2017-05-26" @default.
• W2614303347 creator A5011420204 @default.
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• W2614303347 creator A5070864099 @default.
• W2614303347 date "2017-06-15" @default.
• W2614303347 modified "2023-10-15" @default.
• W2614303347 title "Modification of the Schottky barrier height at the RuO ₂ cathode during resistance degradation of Fe‐doped SrTiO ₃" @default.
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• W2614303347 doi "https://doi.org/10.1111/jace.14962" @default.
• W2614303347 hasPublicationYear "2017" @default.
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