Matches in SemOpenAlex for { <https://semopenalex.org/work/W2615204552> ?p ?o ?g. }
- W2615204552 endingPage "025108" @default.
- W2615204552 startingPage "025108" @default.
- W2615204552 abstract "The performance of MoS2 transistors is strongly affected by charge trapping in oxide traps with very broad distributions of time constants. These defects degrade the mobility and additionally lead to the hysteresis of the gate transfer characteristics, which presents a crucial performance and reliability issue for these new technologies. Here we perform a detailed study of the hysteresis in double-gated MoS2 FETs and show that this issue is nothing else than a combination of threshold voltage shifts resulting from positive and negative bias-temperature instabilities. While these instabilities are well known from silicon devices, they are even more important in 2D devices given the considerably larger defect densities. Most importantly, the magnitudes of these threshold voltage shifts depend strongly on the density and energetic alignment of the active oxide traps. Based on this, we introduce the incremental hysteresis sweep method which allows for an accurate mapping of these defects and extract their energy distributions from simulations. By applying our method to analyze the impact of oxide traps situated in the Al2O3 top gate of several devices, we confirm its versatility. Since all 2D devices investigated so far suffer from a similar hysteresis behavior, the incremental hysteresis sweep method provides a unique and powerful way for the detailed characterization of their defect bands." @default.
- W2615204552 created "2017-05-26" @default.
- W2615204552 creator A5003579890 @default.
- W2615204552 creator A5008613051 @default.
- W2615204552 creator A5009096098 @default.
- W2615204552 creator A5012113227 @default.
- W2615204552 creator A5029004425 @default.
- W2615204552 creator A5035770109 @default.
- W2615204552 creator A5047987940 @default.
- W2615204552 creator A5062594496 @default.
- W2615204552 creator A5077464890 @default.
- W2615204552 date "2017-06-08" @default.
- W2615204552 modified "2023-10-16" @default.
- W2615204552 title "Energetic mapping of oxide traps in MoS <sub>2</sub> field-effect transistors" @default.
- W2615204552 cites W1603442421 @default.
- W2615204552 cites W1648058264 @default.
- W2615204552 cites W1849445681 @default.
- W2615204552 cites W1970919237 @default.
- W2615204552 cites W1975628705 @default.
- W2615204552 cites W1976305461 @default.
- W2615204552 cites W1978905540 @default.
- W2615204552 cites W1985295683 @default.
- W2615204552 cites W1992472539 @default.
- W2615204552 cites W2000573041 @default.
- W2615204552 cites W2011189565 @default.
- W2615204552 cites W2021994802 @default.
- W2615204552 cites W2026386847 @default.
- W2615204552 cites W2041424982 @default.
- W2615204552 cites W2045705000 @default.
- W2615204552 cites W2048682471 @default.
- W2615204552 cites W2051625133 @default.
- W2615204552 cites W2052306257 @default.
- W2615204552 cites W2052875334 @default.
- W2615204552 cites W2053081018 @default.
- W2615204552 cites W2056727633 @default.
- W2615204552 cites W2057215727 @default.
- W2615204552 cites W2066083252 @default.
- W2615204552 cites W2073274025 @default.
- W2615204552 cites W2073898770 @default.
- W2615204552 cites W2078797503 @default.
- W2615204552 cites W2079689884 @default.
- W2615204552 cites W2088389106 @default.
- W2615204552 cites W2104894777 @default.
- W2615204552 cites W2105078756 @default.
- W2615204552 cites W2105327370 @default.
- W2615204552 cites W2112990349 @default.
- W2615204552 cites W2113631194 @default.
- W2615204552 cites W2114859176 @default.
- W2615204552 cites W2123210368 @default.
- W2615204552 cites W2129553451 @default.
- W2615204552 cites W2134777311 @default.
- W2615204552 cites W2140390681 @default.
- W2615204552 cites W2149307116 @default.
- W2615204552 cites W2149368198 @default.
- W2615204552 cites W2150265823 @default.
- W2615204552 cites W2151860561 @default.
- W2615204552 cites W2153685625 @default.
- W2615204552 cites W2157180100 @default.
- W2615204552 cites W2163433444 @default.
- W2615204552 cites W2278636676 @default.
- W2615204552 cites W2318692914 @default.
- W2615204552 cites W2328412715 @default.
- W2615204552 cites W2332278225 @default.
- W2615204552 cites W2333187132 @default.
- W2615204552 cites W2336104448 @default.
- W2615204552 cites W2390827020 @default.
- W2615204552 cites W2396859594 @default.
- W2615204552 cites W2465510599 @default.
- W2615204552 cites W2473285608 @default.
- W2615204552 cites W2524462216 @default.
- W2615204552 cites W2527586943 @default.
- W2615204552 cites W2528558896 @default.
- W2615204552 cites W2552274731 @default.
- W2615204552 cites W2560834721 @default.
- W2615204552 cites W2570115046 @default.
- W2615204552 cites W3101696164 @default.
- W2615204552 cites W3102960592 @default.
- W2615204552 cites W3106453698 @default.
- W2615204552 cites W4375921158 @default.
- W2615204552 doi "https://doi.org/10.1088/2053-1583/aa734a" @default.
- W2615204552 hasPublicationYear "2017" @default.
- W2615204552 type Work @default.
- W2615204552 sameAs 2615204552 @default.
- W2615204552 citedByCount "43" @default.
- W2615204552 countsByYear W26152045522017 @default.
- W2615204552 countsByYear W26152045522018 @default.
- W2615204552 countsByYear W26152045522019 @default.
- W2615204552 countsByYear W26152045522020 @default.
- W2615204552 countsByYear W26152045522021 @default.
- W2615204552 countsByYear W26152045522022 @default.
- W2615204552 countsByYear W26152045522023 @default.
- W2615204552 crossrefType "journal-article" @default.
- W2615204552 hasAuthorship W2615204552A5003579890 @default.
- W2615204552 hasAuthorship W2615204552A5008613051 @default.
- W2615204552 hasAuthorship W2615204552A5009096098 @default.
- W2615204552 hasAuthorship W2615204552A5012113227 @default.
- W2615204552 hasAuthorship W2615204552A5029004425 @default.
- W2615204552 hasAuthorship W2615204552A5035770109 @default.