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- W2615498544 endingPage "1600726" @default.
- W2615498544 startingPage "1600726" @default.
- W2615498544 abstract "Recessed MIS gate structures with SiNx gate dielectric layer were investigated for use in normally off AlGaN/GaN-on-Si high electron mobility transistors (HEMTs). The channel mobility and threshold voltage (Vth) instability were strongly affected by the recessed configuration. Employing a 30 nm SiNx gate dielectric layer composed of 6 nm PEALD and 24 nm ICP-CVD films on a 2 nm AlGaN recessed barrier layer resulted in excellent electrical and dynamic characteristics with reduced effective interface trap density. A maximum drain current density of 590 mA mm−1, an on-resistance of 0.75 mΩ · cm2, and a breakdown voltage of >1100 V were achieved for the gate-to-drain distance of 10 μm. Owing to the remaining AlGaN barrier layer under the recessed gate region of the partially recessed device, the interaction between MIS interface traps and channel electrons was suppressed effectively, resulting in improved channel mobility and Vth stability." @default.
- W2615498544 created "2017-05-26" @default.
- W2615498544 creator A5011820335 @default.
- W2615498544 creator A5013886348 @default.
- W2615498544 creator A5037834486 @default.
- W2615498544 creator A5042975702 @default.
- W2615498544 creator A5053169867 @default.
- W2615498544 creator A5072972248 @default.
- W2615498544 date "2017-05-15" @default.
- W2615498544 modified "2023-10-16" @default.
- W2615498544 title "High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiN<i> <sub>x</sub> </i> MIS structure" @default.
- W2615498544 cites W1850871538 @default.
- W2615498544 cites W1883168124 @default.
- W2615498544 cites W1965052718 @default.
- W2615498544 cites W1976072495 @default.
- W2615498544 cites W1978424540 @default.
- W2615498544 cites W2007769004 @default.
- W2615498544 cites W2010084723 @default.
- W2615498544 cites W2025815089 @default.
- W2615498544 cites W2033464198 @default.
- W2615498544 cites W2075997516 @default.
- W2615498544 cites W2080342590 @default.
- W2615498544 cites W2097322072 @default.
- W2615498544 cites W2110618548 @default.
- W2615498544 cites W2120465859 @default.
- W2615498544 cites W2124964377 @default.
- W2615498544 cites W2140053502 @default.
- W2615498544 cites W2147181763 @default.
- W2615498544 cites W2155968399 @default.
- W2615498544 cites W2169301346 @default.
- W2615498544 cites W2313311569 @default.
- W2615498544 doi "https://doi.org/10.1002/pssa.201600726" @default.
- W2615498544 hasPublicationYear "2017" @default.
- W2615498544 type Work @default.
- W2615498544 sameAs 2615498544 @default.
- W2615498544 citedByCount "10" @default.
- W2615498544 countsByYear W26154985442017 @default.
- W2615498544 countsByYear W26154985442018 @default.
- W2615498544 countsByYear W26154985442019 @default.
- W2615498544 countsByYear W26154985442020 @default.
- W2615498544 countsByYear W26154985442021 @default.
- W2615498544 countsByYear W26154985442022 @default.
- W2615498544 crossrefType "journal-article" @default.
- W2615498544 hasAuthorship W2615498544A5011820335 @default.
- W2615498544 hasAuthorship W2615498544A5013886348 @default.
- W2615498544 hasAuthorship W2615498544A5037834486 @default.
- W2615498544 hasAuthorship W2615498544A5042975702 @default.
- W2615498544 hasAuthorship W2615498544A5053169867 @default.
- W2615498544 hasAuthorship W2615498544A5072972248 @default.
- W2615498544 hasConcept C119321828 @default.
- W2615498544 hasConcept C119599485 @default.
- W2615498544 hasConcept C127413603 @default.
- W2615498544 hasConcept C133386390 @default.
- W2615498544 hasConcept C165801399 @default.
- W2615498544 hasConcept C166972891 @default.
- W2615498544 hasConcept C171250308 @default.
- W2615498544 hasConcept C172385210 @default.
- W2615498544 hasConcept C192562407 @default.
- W2615498544 hasConcept C195370968 @default.
- W2615498544 hasConcept C2779227376 @default.
- W2615498544 hasConcept C2779833192 @default.
- W2615498544 hasConcept C49040817 @default.
- W2615498544 hasConceptScore W2615498544C119321828 @default.
- W2615498544 hasConceptScore W2615498544C119599485 @default.
- W2615498544 hasConceptScore W2615498544C127413603 @default.
- W2615498544 hasConceptScore W2615498544C133386390 @default.
- W2615498544 hasConceptScore W2615498544C165801399 @default.
- W2615498544 hasConceptScore W2615498544C166972891 @default.
- W2615498544 hasConceptScore W2615498544C171250308 @default.
- W2615498544 hasConceptScore W2615498544C172385210 @default.
- W2615498544 hasConceptScore W2615498544C192562407 @default.
- W2615498544 hasConceptScore W2615498544C195370968 @default.
- W2615498544 hasConceptScore W2615498544C2779227376 @default.
- W2615498544 hasConceptScore W2615498544C2779833192 @default.
- W2615498544 hasConceptScore W2615498544C49040817 @default.
- W2615498544 hasFunder F4320321408 @default.
- W2615498544 hasFunder F4320322120 @default.
- W2615498544 hasIssue "8" @default.
- W2615498544 hasLocation W26154985441 @default.
- W2615498544 hasOpenAccess W2615498544 @default.
- W2615498544 hasPrimaryLocation W26154985441 @default.
- W2615498544 hasRelatedWork W1218742577 @default.
- W2615498544 hasRelatedWork W2020185829 @default.
- W2615498544 hasRelatedWork W2027508997 @default.
- W2615498544 hasRelatedWork W2292296501 @default.
- W2615498544 hasRelatedWork W2744274332 @default.
- W2615498544 hasRelatedWork W3096711583 @default.
- W2615498544 hasRelatedWork W3135688849 @default.
- W2615498544 hasRelatedWork W3164687637 @default.
- W2615498544 hasRelatedWork W4294672502 @default.
- W2615498544 hasRelatedWork W4318035842 @default.
- W2615498544 hasVolume "214" @default.
- W2615498544 isParatext "false" @default.
- W2615498544 isRetracted "false" @default.
- W2615498544 magId "2615498544" @default.
- W2615498544 workType "article" @default.