Matches in SemOpenAlex for { <https://semopenalex.org/work/W2616563850> ?p ?o ?g. }
Showing items 1 to 81 of
81
with 100 items per page.
- W2616563850 endingPage "000585" @default.
- W2616563850 startingPage "000570" @default.
- W2616563850 abstract "To reduce the RC latency, leading edge silicon nodes employ porous SiO2 dielectrics in the interconnect stack. Introduction of porosity lowers the dielectric constant, k, but also significantly decreases both the elastic modulus and fracture toughness of the dielectric. As such, devices manufactured in silicon processes that use low K (90nm, 65nm, and 55nm) and even more so extremely low K ( 45nm, 40nm, and 28nm) interlayer dielectrics are substantially more prone to fracture as a result of package induced stresses than non porous higher K dielectrics. Since the package stresses scale with die size and package body size and inversely with bump pitch, manufacture of large die and package size flip chip devices made with extremely low K dielectrics has proven to be challenging. The stress challenge is further exacerbated by the RoHS requirements for lead free packaging which requires higher process temperatures and somewhat higher yield point solders. The combination of increased stress and reduced mechanical robustness of porous dielectrics has lead to significant reliability and assembly yield issues that have in some cases slowed the introduction of 45nm and 40nm large die lead free flip chip into the market. The work summarized in this paper shows that devices designed to withstand stresses in combination with appropriate assembly processes and bill of materials, yield highly reliable, lead free flip chip packaged devices, with die sizes greater than 400mm2 and package sizes greater than 42.5mm on a side in commercial assembly production lines." @default.
- W2616563850 created "2017-05-26" @default.
- W2616563850 creator A5012464270 @default.
- W2616563850 creator A5015208203 @default.
- W2616563850 creator A5034241155 @default.
- W2616563850 creator A5034612499 @default.
- W2616563850 creator A5080989995 @default.
- W2616563850 creator A5090922222 @default.
- W2616563850 date "2012-01-01" @default.
- W2616563850 modified "2023-09-26" @default.
- W2616563850 title "Large Die Size Lead Free Flip Chip Ball Grid Array Packaging Considerations for 40nm Fab Technology" @default.
- W2616563850 doi "https://doi.org/10.4071/2012dpc-ta23" @default.
- W2616563850 hasPublicationYear "2012" @default.
- W2616563850 type Work @default.
- W2616563850 sameAs 2616563850 @default.
- W2616563850 citedByCount "1" @default.
- W2616563850 countsByYear W26165638502012 @default.
- W2616563850 crossrefType "journal-article" @default.
- W2616563850 hasAuthorship W2616563850A5012464270 @default.
- W2616563850 hasAuthorship W2616563850A5015208203 @default.
- W2616563850 hasAuthorship W2616563850A5034241155 @default.
- W2616563850 hasAuthorship W2616563850A5034612499 @default.
- W2616563850 hasAuthorship W2616563850A5080989995 @default.
- W2616563850 hasAuthorship W2616563850A5090922222 @default.
- W2616563850 hasConcept C111106434 @default.
- W2616563850 hasConcept C119599485 @default.
- W2616563850 hasConcept C126233035 @default.
- W2616563850 hasConcept C127413603 @default.
- W2616563850 hasConcept C133386390 @default.
- W2616563850 hasConcept C159985019 @default.
- W2616563850 hasConcept C160671074 @default.
- W2616563850 hasConcept C165005293 @default.
- W2616563850 hasConcept C171250308 @default.
- W2616563850 hasConcept C192562407 @default.
- W2616563850 hasConcept C24326235 @default.
- W2616563850 hasConcept C2779227376 @default.
- W2616563850 hasConcept C49040817 @default.
- W2616563850 hasConcept C50296614 @default.
- W2616563850 hasConcept C68928338 @default.
- W2616563850 hasConcept C78519656 @default.
- W2616563850 hasConcept C79072407 @default.
- W2616563850 hasConcept C94709252 @default.
- W2616563850 hasConceptScore W2616563850C111106434 @default.
- W2616563850 hasConceptScore W2616563850C119599485 @default.
- W2616563850 hasConceptScore W2616563850C126233035 @default.
- W2616563850 hasConceptScore W2616563850C127413603 @default.
- W2616563850 hasConceptScore W2616563850C133386390 @default.
- W2616563850 hasConceptScore W2616563850C159985019 @default.
- W2616563850 hasConceptScore W2616563850C160671074 @default.
- W2616563850 hasConceptScore W2616563850C165005293 @default.
- W2616563850 hasConceptScore W2616563850C171250308 @default.
- W2616563850 hasConceptScore W2616563850C192562407 @default.
- W2616563850 hasConceptScore W2616563850C24326235 @default.
- W2616563850 hasConceptScore W2616563850C2779227376 @default.
- W2616563850 hasConceptScore W2616563850C49040817 @default.
- W2616563850 hasConceptScore W2616563850C50296614 @default.
- W2616563850 hasConceptScore W2616563850C68928338 @default.
- W2616563850 hasConceptScore W2616563850C78519656 @default.
- W2616563850 hasConceptScore W2616563850C79072407 @default.
- W2616563850 hasConceptScore W2616563850C94709252 @default.
- W2616563850 hasIssue "DPC" @default.
- W2616563850 hasLocation W26165638501 @default.
- W2616563850 hasOpenAccess W2616563850 @default.
- W2616563850 hasPrimaryLocation W26165638501 @default.
- W2616563850 hasRelatedWork W1825276086 @default.
- W2616563850 hasRelatedWork W2001918364 @default.
- W2616563850 hasRelatedWork W2018914183 @default.
- W2616563850 hasRelatedWork W2110051111 @default.
- W2616563850 hasRelatedWork W2121237192 @default.
- W2616563850 hasRelatedWork W2126979269 @default.
- W2616563850 hasRelatedWork W2155179766 @default.
- W2616563850 hasRelatedWork W2168889778 @default.
- W2616563850 hasRelatedWork W2544446123 @default.
- W2616563850 hasRelatedWork W2470505307 @default.
- W2616563850 hasVolume "2012" @default.
- W2616563850 isParatext "false" @default.
- W2616563850 isRetracted "false" @default.
- W2616563850 magId "2616563850" @default.
- W2616563850 workType "article" @default.