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- W2616576972 abstract "Abstract Silicon nitride ( SiN x ) layers of varying thickness were fabricated in a a- Si / SiN x /a-Si heterostructure via nitridation of the bottom a-Si layer, using ammonia (NH3) gas, in the hot-wire chemical vapor deposition (HWCVD) chamber at 250 °C. The thickness of the SiN x in the film was varied by changing the nitridation time (tN) in range of 1–30 min. Raman analysis showed that the a-Si and SiN x layers formed in the films were amorphous. Fourier transform infrared (FTIR) and X-ray photoelectron spectroscopy (XPS) results indicated Si3N4 was formed in the nitrided a-Si. Presence of strong SiH2 (2086 cm−1) peaks in the FTIR spectrum suggested the hydrogen in a-Si effused at 250 °C. XPS Si2p spectra and high resolution transmission electron microscopy images showed thin SiN x layer of thickness 1.8–7.6 nm was formed. Formation of SiN x thicker than 7.6 nm even at a low temperature (250 °C) is suggestive of the H effusion promoting both the reaction and the diffusion of the nitridants in a-Si. The kinetics of the growth of SiN x during nitridation of the a-Si layer closely matches the growth process described by diffusion model, wherein the reaction of nitridants and a-Si is controlled by diffusion in the SiN x layer formed." @default.
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- W2616576972 date "2017-08-01" @default.
- W2616576972 modified "2023-09-25" @default.
- W2616576972 title "Growth of silicon nitride by nitridation of amorphous silicon at low temperature in hot-wire CVD" @default.
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- W2616576972 doi "https://doi.org/10.1016/j.mssp.2017.05.015" @default.
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