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• W2617018879 abstract "Nonvolatile memory devices based on solution-processed thin film transistors (TFTs) of undoped ZnO and ZnO doped with Hf and NaF incorporating Ag nanowires (AgNWs) as charge trapping media between the ZnO and insulator interface are demonstrated." @default.
• W2617018879 created "2017-06-05" @default.
• W2617018879 creator A5072415165 @default.
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• W2617018879 date "2017-01-01" @default.
• W2617018879 modified "2023-10-12" @default.
• W2617018879 title "Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface" @default.
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• W2617018879 doi "https://doi.org/10.1039/c7ra03460a" @default.
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