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- W2617302645 abstract "GaN-based transistors are attractive for the nextgeneration RF power and mixed signal electronics due to their high breakdown field and high carrier saturation velocity. III-N high electron mobility transistors (HEMTs) fabricated on the Nface of GaN are well-suited to address the problems of poor electron confinement and high ohmic contact resistance in the highly scaled transistors. At 4 GHz, N-polar metal-insulatorsemiconductor (MIS)-HEMTs with a gate length of 0.7 m exhibited a highest output power density (Pout) of 8.1 W/mm and highest power-added efficiency(PAE) of 71 %, while a Pout of 4.2 W/mm and a PAE of 49% were achieved at 10 GHz. A high speed N-polar MIS-HEMT fabricated with a gate-first selfaligned InGaN-based ohmic contact regrowth technology was characterized, demonstrating an ultra-low contact resistance of 23n- m and a state-of-the-art fr •LG product of 16.8 GHz- m with a gate length of 130 nm." @default.
- W2617302645 created "2017-06-05" @default.
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- W2617302645 date "2016-09-19" @default.
- W2617302645 modified "2023-09-23" @default.
- W2617302645 title "Characterization of N-Polar GaN Based HEMT Heterostructures for Mixed Signal Applications" @default.
- W2617302645 hasPublicationYear "2016" @default.
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