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- W2619984216 abstract "The curvature relaxation technique is a new, electrode-free, in situ technique for simultaneously measuring the chemical oxygen surface exchange coefficient (k) and stress state (left( lambda right)) of a thin or thick, dense or porous mechano-chemically active film atop a dense inert substrate. This chapter presents (1) an overview of the technique, (2) a detailed derivation of the fitting equations used to extract k from curvature relaxation experiments, (3) a discussion of the technique’s benefits and limitations, and (4) sample MATLAB code to predict the stress distributions found within dense thin or thick film bilayers as a function of temperature." @default.
- W2619984216 created "2017-06-05" @default.
- W2619984216 creator A5011139195 @default.
- W2619984216 date "2017-01-01" @default.
- W2619984216 modified "2023-09-28" @default.
- W2619984216 title "In Situ Wafer Curvature Relaxation Measurements to Determine Surface Exchange Coefficients and Thermo-chemically Induced Stresses" @default.
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- W2619984216 doi "https://doi.org/10.1007/978-3-319-51407-9_5" @default.
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