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- W2620821330 abstract "In present study, we have investigated electronic, optical and transport properties of Cr substituted SW GaNNT. We find that the (6, 0) nanotubes of GaN are stable and semiconducting with the band gap of 2.4 eV. Doping with Cr appears to reduce the band gap of GaN nanotubes. The V-I characteristics show typical tunnel diode behaviour for the device where the tunnelling current reaches a maximum value at the applied bias of 0.4 V and we observed a negative slope region when forward bias is applied. Because of this unusual behaviour, it can be used in number of special applications in electronic devices." @default.
- W2620821330 created "2017-06-09" @default.
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- W2620821330 date "2017-05-31" @default.
- W2620821330 modified "2023-09-25" @default.
- W2620821330 title "Computational study of Cr substituted single-walled GaN nanotubes" @default.
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- W2620821330 doi "https://doi.org/10.1088/1742-6596/836/1/012034" @default.
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