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• W2621608394 abstract "This paper presents a ternary content-addressable memory (TCAM) cell based on a skewed straintronic magnetotunneling junction (MTJ) switch. A straintronic magnetotunneling junction (s-MTJ) is a three-terminal switch, where the resistance between two of the terminals switches when a potential is applied to the third (gate) terminal that induces strain in the magnetostrictive free-layer. An s-MTJ is a highly energy-efficient switch that would dissipate only ~aJ of energy during switching. This paper discusses a novel variant of s-MTJ, namely skewed s-MTJ (ss-MTJ), where the MTJ switching can be controlled by two gate terminals. The current through an ss-MTJ is minimum when the potentials at the first and second gate terminals (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> and V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> , respectively) obey the relation V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> = V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> + V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>F</sub> . Here, V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>F</sub> is a fixed voltage (“offset voltage”). Current in an ss-MTJ increases steeply when V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> and V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> deviate from the above “match” condition. This unconventional I-V characteristic of an ss-MTJ is exploited to design a non-Boolean TCAM cell based on just one transistor, one trench capacitor, and one ss-MTJ. We also discuss search and write operations in the ss-MTJ-TCAM cell, and show that the cell requires very small voltages to operate because of the unique I-V characteristics of the ss-MTJ." @default.
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• W2621608394 date "2017-07-01" @default.
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• W2621608394 title "Skewed Straintronic Magnetotunneling-Junction-Based Ternary Content-Addressable Memory—Part I" @default.
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• W2621608394 doi "https://doi.org/10.1109/ted.2017.2706755" @default.
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