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• W2622078878 startingPage "1345" @default.
• W2622078878 abstract "We use a random gap model to describe a metal–insulator transition in three-dimensional semiconductors due to doping, and find a conventional phase transition, where the effective scattering rate is the order parameter. Spontaneous symmetry breaking results in metallic behavior, whereas the insulating regime is characterized by the absence of spontaneous symmetry breaking. The transition is continuous for the average conductivity with critical exponent equal to 1. Away from the critical point, the exponent is roughly 0.6, which may explain experimental observations of a crossover of the exponent from 1 to 0.5 by going away from the critical point." @default.
• W2622078878 created "2017-06-15" @default.
• W2622078878 creator A5000032482 @default.
• W2622078878 date "2019-11-01" @default.
• W2622078878 modified "2023-09-25" @default.
• W2622078878 title "Metal–Insulator Transition in Three-Dimensional Semiconductors" @default.
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• W2622078878 doi "https://doi.org/10.3390/sym11111345" @default.
• W2622078878 hasPublicationYear "2019" @default.
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