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- W2622079516 abstract "This paper has been dealt with ferroelectric behavior of silicon doped hafnium oxide using double gate MOSFET with different oxide thickness. The Variation in the drain cuurent with the gate voltage from -1.5V to 2.0V and 2.0V to -1.5V has been studied and these variations also compared with the conventional double gate MOSFET. The study mainly concentrates on the polarization behavior of silicon doped hafnium oxide and concludes to a result of increase in the memory window with the variation in the oxide thickness which is more helpful in making FRAM. Sentaurus TCAD is used to observe the memory window variations up to 0.80 mV with the gate voltage variation from -1 V to 2 V." @default.
- W2622079516 created "2017-06-15" @default.
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- W2622079516 date "2016-09-01" @default.
- W2622079516 modified "2023-09-22" @default.
- W2622079516 title "Study of Variations in Memory Window of Si: HfO2 Based MFIS-FET" @default.
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- W2622079516 doi "https://doi.org/10.1109/icmete.2016.98" @default.
- W2622079516 hasPublicationYear "2016" @default.
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