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- W2623612013 abstract "ABSTRACT In this paper, field effect transistors (FET) based on different kinds of non-graphene materials are introduced, which are MoS 2 , WSe 2 and black phosphorus (BP). Those devices have their unique features in fabrication process compared with conventional FETs. Among them, MoS 2 FET shows better electrical characteristics by applying a SiO 2 protective layer; WSe 2 FET is fabricated based on a new low pressure chemical vapor deposition (LPCVD) method; BP FET acquires high on/off ratio and high hole mobility by using a simple dry transfer method. Those novel non-graphene materials inspire new design and fabrication process of basic logic device." @default.
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- W2623612013 date "2017-01-01" @default.
- W2623612013 modified "2023-09-24" @default.
- W2623612013 title "Novel Field Effect Transistor Fabrication Based on Non-Graphene 2D Materials" @default.
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- W2623612013 doi "https://doi.org/10.1557/adv.2017.417" @default.
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